All-optical switches based on GaAs/AlGaAs quantum dots vertical cavity

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dc.contributor.authorIsmail, F. D.
dc.contributor.authorJomtarak, R.
dc.contributor.authorTeeka, C.
dc.contributor.authorAli, J.
dc.contributor.authorYupapin, P. P.
dc.date.accessioned2026-08-06T10:01:47Z
dc.date.available2026-08-06T10:01:47Z
dc.date.issued2011-01-01
dc.description.abstractIn this paper, an all-optical switch based on self-assembled GaAs/AlAs quantum dots (QDs) within a vertical cavity is designed and proposed. Two essential aspects of this novel device have been investigated, which include the QD/cavity nonlinearity with appropriately designed mirrors and the intersubband carrier dynamics inside QDs. The vertical-reflection-type switches have been investigated with an asymmetric cavity that consists of 12 periods of GaAs/Al<inf>0.8</inf>Ga<inf>0.2</inf>As and 25 periods for the front and back mirrors, respectively. The thicknesses of the GaAs and AlGaAs layers are chosen to be 89 and 102 nm, respectively. To give a dot-in-a-well (DWELL) structure, the 65 nm dimension of Si was recommended to deposit within a 20 nm AlAs QW. Results obtained have shown that all-optical switching via the QD excited states has been achieved with a time constant down to 275-fs and over 29.5 nm tunable wavelengths. These results demonstrated that QDs within a vertical cavity have great potential to realize low-power, consumption polarization-insensitive and micrometer-sized switching devices for future optical communication and signal processing systems. © 2011 World Scientific Publishing Company.
dc.identifier.citationJournal of Nonlinear Optical Physics and Materials, 20(2), 205-215, 2011
dc.identifier.doi10.1142/S0218863511006030
dc.identifier.issn02188635
dc.identifier.other2-s2.0-80051752910
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/3487
dc.sourceJournal of Nonlinear Optical Physics and Materials
dc.subjectAll-optical switches
dc.subjectatom bottom-up
dc.subjectquantum dots
dc.subjectvertical cavity
dc.titleAll-optical switches based on GaAs/AlGaAs quantum dots vertical cavity
dc.typeArticle

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