Mechanism of Carrier Transport in n-Type _-FeSi<sub>2</sub>/Intrinsic Si/p-Type Si Heterojunctions

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dc.contributor.authorNathaporn Promros
dc.contributor.authorMotoki Takahara
dc.contributor.authorRyuji Baba
dc.contributor.authorTarek M. Mostafa
dc.contributor.authorMahmoud Shaban
dc.contributor.authorTsuyoshi Yoshitake
dc.date.accessioned2025-07-21T05:56:04Z
dc.date.issued2015-07-29
dc.identifier.doi10.4028/www.scientific.net/amr.1119.189
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/5262
dc.subjectThermionic emission
dc.subjectDepletion region
dc.subject.classificationSemiconductor materials and interfaces
dc.titleMechanism of Carrier Transport in n-Type _-FeSi<sub>2</sub>/Intrinsic Si/p-Type Si Heterojunctions
dc.typeArticle

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