CVD Synthesis of Intermediate State-Free, Large-Area and Continuous MoS2 via Single-Step Vapor-Phase Sulfurization of MoO2 Precursor

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dc.contributor.authorTinna Chiawchan
dc.contributor.authorHarihara Ramamoorthy
dc.contributor.authorKanokwan Buapan
dc.contributor.authorRatchanok Somphonsane
dc.date.accessioned2026-05-08T19:15:28Z
dc.date.issued2021-10-8
dc.description.abstractwas shown to suppress intermediate state formations for a wide range of experimental parameters investigated and is completely absent, provided that the global S:Mo loading ratio is set higher than the stoichiometric ratio of 3:1 required by the VPS reaction.
dc.identifier.doi10.3390/nano11102642
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/15046
dc.publisherNanomaterials
dc.subject2D Materials and Applications
dc.subjectMXene and MAX Phase Materials
dc.subjectAdvanced Photocatalysis Techniques
dc.titleCVD Synthesis of Intermediate State-Free, Large-Area and Continuous MoS2 via Single-Step Vapor-Phase Sulfurization of MoO2 Precursor
dc.typeArticle

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