Dielectric relaxation behavior of BaZrO3 ceramics at low temperature

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dc.contributor.authorPulphol, Phieraya
dc.contributor.authorVittayakorn, Naratip
dc.contributor.authorVittayakorn, Wanwilai
dc.contributor.authorKolodiazhnyi, Taras
dc.date.accessioned2026-08-06T10:29:54Z
dc.date.available2026-08-06T10:29:54Z
dc.date.issued2020-10-15
dc.description.abstractDielectric behavior of nominally pure BaZrO<inf>3</inf>, Sc-doped BaZrO<inf>3</inf> and Sc + Nb-co-doped BaZrO<inf>3</inf> ceramics is reported in this paper. Several dielectric anomalies are detected in the pure and Sc-doped BaZrO<inf>3</inf> in temperature interval of 2–700 K. The Arrhenius-type dielectric relaxation has activation energies ranging from ca. 10 meV–800 meV. Annealing in Ar atmosphere at 1200 °C alters the intensity of the dielectric loss peaks especially in the Sc-doped BaZrO<inf>3.</inf> In contrast, none of the dielectric relaxation anomalies were found in Sc + Nb-co-doped BaZrO<inf>3</inf>. It is proposed that at least some of the dielectric peaks originate from the proton dynamics which includes high temperature migration, intermediate-temperature rotation and low-temperature phonon-assisted proton tunneling.
dc.identifier.citationCeramics International, 46(15), 24488-24494, 2020
dc.identifier.doi10.1016/j.ceramint.2020.06.234
dc.identifier.issn02728842
dc.identifier.other2-s2.0-85087749088
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/11312
dc.sourceCeramics International
dc.subjectBarium zirconate
dc.subjectDielectric anomalies
dc.subjectPhonon-assisted proton tunneling
dc.titleDielectric relaxation behavior of BaZrO3 ceramics at low temperature
dc.typeArticle

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