Effect of Base Width and Implantation Dose on Performance of 3-Terminal Magnetotransistor

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dc.contributor.authorJaroenmit Woradet
dc.contributor.authorToempong Phetchakul
dc.contributor.authorSompong Chareankid
dc.contributor.authorWeera Pengchan
dc.contributor.authorNipapan Klunngien
dc.contributor.authorCharndet Hruanun
dc.contributor.authorAmporn Poyai
dc.date.accessioned2025-07-21T05:49:15Z
dc.date.issued2007-09-01
dc.identifier.doi10.1109/isicir.2007.4441791
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/1379
dc.subjectBase (topology)
dc.subject.classificationMagnetic Field Sensors Techniques
dc.titleEffect of Base Width and Implantation Dose on Performance of 3-Terminal Magnetotransistor
dc.typeArticle

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