Temperature Dependent Current-Voltage Characteristics of n-Type _-FeSi<sub>2</sub>/Intrinsic Si/p-Type Si Heterojunctions

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dc.contributor.authorNathaporn Promros
dc.contributor.authorDalin Prajakkan
dc.contributor.authorNantharat Hongsa
dc.contributor.authorNattanee Suthayanan
dc.contributor.authorPhongsaphak Sittimart
dc.contributor.authorMotoki Takahara
dc.contributor.authorRyuji Baba
dc.contributor.authorTarek M. Mostafa
dc.contributor.authorMahmoud Shaban
dc.contributor.authorTomohiro Yoshitake
dc.date.accessioned2025-07-21T05:56:03Z
dc.date.issued2015-07-01
dc.identifier.doi10.4028/www.scientific.net/amr.1120-1121.435
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/5244
dc.subjectThermionic emission
dc.subjectEquivalent series resistance
dc.subjectSaturation (graph theory)
dc.subjectSaturation current
dc.subject.classificationSemiconductor materials and interfaces
dc.titleTemperature Dependent Current-Voltage Characteristics of n-Type _-FeSi<sub>2</sub>/Intrinsic Si/p-Type Si Heterojunctions
dc.typeArticle

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