Reverse bias dependent impedance and dielectric properties of Al/n-NC FeSi2/p-Si/Pd heterostructures formed by facing-targets sputtering

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dc.contributor.authorNattakorn Borwornpornmetee
dc.contributor.authorRawiwan Chaleawpong
dc.contributor.authorPeerasil Charoenyuenyao
dc.contributor.authorAdison Nopparuchikun
dc.contributor.authorBoonchoat Paosawatyanyong
dc.contributor.authorPhongsaphak Sittimart
dc.contributor.authorTsuyoshi Yoshitake
dc.contributor.authorNathaporn Promros
dc.date.accessioned2026-05-08T19:19:18Z
dc.date.issued2022-3-31
dc.identifier.doi10.1016/j.mssp.2022.106641
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/16950
dc.publisherMaterials Science in Semiconductor Processing
dc.subjectSemiconductor materials and interfaces
dc.subjectSemiconductor materials and devices
dc.subjectAnodic Oxide Films and Nanostructures
dc.titleReverse bias dependent impedance and dielectric properties of Al/n-NC FeSi2/p-Si/Pd heterostructures formed by facing-targets sputtering
dc.typeArticle

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