The Design of Metal-Semiconductor-Metal Structure Magnetic Sensor

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dc.contributor.authorSutthinet, Chalin
dc.contributor.authorPhetchakul, Toempong
dc.contributor.authorLuanatikomkul, Wittaya
dc.contributor.authorPoyai, Amporn
dc.date.accessioned2026-08-06T10:12:40Z
dc.date.available2026-08-06T10:12:40Z
dc.date.issued2016-01-01
dc.description.abstractThis paper presents the MSM structure magnetic detector device that normally detects the electromagnetic wave. The device is special design for magnetic field detector and still detects the electromagnetic wave as normal function. The schottky diode with the split contacts structure allows us to reach this target. The device operates with the saturation current and the magnetic response is the current difference between two contacts which is injected from one metal and deflected in semiconductor toward to another metal. From the simulation result by Sentaurus TCAD, the relative sensitivity is 14.19 mT<sup>-1</sup> at the current 0.3 μA. This device is the first MSM multi-sensor for magnetic and electromagnetic wave detector.
dc.identifier.citationProcedia Computer Science, 86, 148-151, 2016
dc.identifier.doi10.1016/j.procs.2016.05.038
dc.identifier.issn18770509
dc.identifier.other2-s2.0-84999886605
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/6547
dc.sourceProcedia Computer Science
dc.subjectElectromagnetic sensor
dc.subjectHall Effect
dc.subjectMagnetic sensor
dc.subjectMSM
dc.subjectSentaurus TCAD
dc.titleThe Design of Metal-Semiconductor-Metal Structure Magnetic Sensor
dc.typeConference Paper

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