Surface Thermal and Electric charge of PN Diode Expose by Soft Radiation Flash Exposure

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dc.contributor.authorSangwaranatee, N.
dc.contributor.authorSrithanachai, I.
dc.contributor.authorNiemcharoen, S.
dc.contributor.authorChaiyasoonthorn, S.
dc.date.accessioned2026-08-06T10:27:52Z
dc.date.available2026-08-06T10:27:52Z
dc.date.issued2020-01-07
dc.description.abstractIn this study present the effect of soft radiation flash exposure (SRFE) to forward bias current-voltage (I-V) of PN diode by using COMSOL simulation program. The results show surface thermal and electric change while expose by radiation with flash exposure technique. Series resistance (R<inf>s</inf>) increase around 2 times and close to idea case after expose by radiation, the radiation will impact to bulk defect and reduce surface recombination. SRFE induce temperature on surface and deep into silicon bulk. The value of R<inf>s</inf> increase with increase expose time. The changing of R<inf>s</inf> becomes independent from radiation dose at high forward bias voltage.
dc.identifier.citationJournal of Physics Conference Series, 1428(1), 2020
dc.identifier.doi10.1088/1742-6596/1428/1/012038
dc.identifier.issn17426588
dc.identifier.other2-s2.0-85079016953
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/10759
dc.sourceJournal of Physics Conference Series
dc.titleSurface Thermal and Electric charge of PN Diode Expose by Soft Radiation Flash Exposure
dc.typeConference Paper

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