Pressure-induced phase transition and indirect band gap semiconductor in ZnSnN2: First Principles Calculation

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dc.contributor.authorWutthigrai Sailuam
dc.contributor.authorIttipon Fongkaew
dc.contributor.authorThanundon Kongnok
dc.contributor.authorKomsilp Kotmool
dc.date.accessioned2026-05-08T19:16:40Z
dc.date.issued2024-11-1
dc.identifier.doi10.1016/j.jssc.2024.125088
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/15625
dc.publisherJournal of Solid State Chemistry
dc.subjectMachine Learning in Materials Science
dc.subjectBoron and Carbon Nanomaterials Research
dc.subjectInorganic Chemistry and Materials
dc.titlePressure-induced phase transition and indirect band gap semiconductor in ZnSnN2: First Principles Calculation
dc.typeArticle

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