Temperature-dependent photoluminescence investigation of narrow well-width InGaAs/InP single quantum well

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dc.contributor.authorW. Pecharapa
dc.contributor.authorW. Techitheera
dc.contributor.authorP. Thanomgam
dc.contributor.authorJ. Nukeaw
dc.date.accessioned2025-07-21T05:49:35Z
dc.date.issued2008-03-24
dc.identifier.doi10.1117/12.799254
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/1565
dc.subject.classificationSemiconductor Quantum Structures and Devices
dc.titleTemperature-dependent photoluminescence investigation of narrow well-width InGaAs/InP single quantum well
dc.typeArticle

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