Inductance simulation using GaAs MESFETs

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dc.contributor.authorTangsrirat, Worapong
dc.contributor.authorSurakampontorn, Wanlop
dc.contributor.authorRiewruja, Vanchai
dc.contributor.authorDumawipata, Teerasilapa
dc.date.accessioned2026-08-06T09:50:16Z
dc.date.available2026-08-06T09:50:16Z
dc.date.issued1998-12-01
dc.description.abstractThis paper proposes a method for an inductance simulation by using GaAs MESFET (Gallium Arsenide MEtal Semiconductor Field-Effect Transistor) devices. The realization method is based on the use of a GaAs voltage-to-current transducer and is also suitable for implementing in monolithic integrated circuit form. The circuit has wide bandwidth, good linearity and the simulated inductive reactance value is a linear function of resistor and capacitor. The PSPICE simulation results show that the properties of the circuit are in close agreement with the theoretical prediction.
dc.identifier.citationIEEE Asia Pacific Conference on Circuits and Systems Proceedings, 275-278, 1998
dc.identifier.other2-s2.0-0032218403
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/194
dc.sourceIEEE Asia Pacific Conference on Circuits and Systems Proceedings
dc.titleInductance simulation using GaAs MESFETs
dc.typeArticle

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