Temperature Dependence of Alternating Current Impedance in n-Type Si/B-Doped p-Type Ultrananocrystalline Diamond Heterojunctions Produced Through Pulsed Laser Deposition

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dc.contributor.authorRawiwan Chaleawpong
dc.contributor.authorNathaporn Promros
dc.contributor.authorPeerasil Charoenyuenyao
dc.contributor.authorTakanori Hanada
dc.contributor.authorShinya Ohmagari
dc.contributor.authorTsuyoshi Yoshitake
dc.date.accessioned2025-07-21T06:02:07Z
dc.date.issued2019-08-06
dc.identifier.doi10.1166/jnn.2020.17293
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/8671
dc.subjectPulsed Laser Deposition
dc.subjectAtmospheric temperature range
dc.subject.classificationDiamond and Carbon-based Materials Research
dc.titleTemperature Dependence of Alternating Current Impedance in n-Type Si/B-Doped p-Type Ultrananocrystalline Diamond Heterojunctions Produced Through Pulsed Laser Deposition
dc.typeArticle

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