Electrical Characteristics of n-Type Nanocrystalline FeSi<sub>2</sub>/Intrinsic Si/p-Type Si Heterojunctions Prepared by Facing-Targets Direct-Current Sputtering

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dc.contributor.authorNathaporn Promros
dc.contributor.authorSuguru Funasaki
dc.contributor.authorRy_hei Iwasaki
dc.contributor.authorTsuyoshi Yoshitake
dc.date.accessioned2025-07-21T05:54:20Z
dc.date.issued2013-11-01
dc.identifier.doi10.4028/www.scientific.net/amm.446-447.88
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/4259
dc.subjectThermionic emission
dc.subjectEquivalent series resistance
dc.subjectNanocrystalline material
dc.subjectSaturation current
dc.subject.classificationSemiconductor materials and interfaces
dc.titleElectrical Characteristics of n-Type Nanocrystalline FeSi<sub>2</sub>/Intrinsic Si/p-Type Si Heterojunctions Prepared by Facing-Targets Direct-Current Sputtering
dc.typeArticle

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