Photodetection Characteristics of Heterojunctions Comprising <i>p</i>-Type Ultrananocrystalline Diamond Films and <i>n</i>-Type Si Substrates at Low Temperatures

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dc.contributor.authorTakanori Hanada
dc.contributor.authorShinya Ohmagari
dc.contributor.authorAbdelrahman Zkria
dc.contributor.authorNathaporn Promros
dc.contributor.authorTsuyoshi Yoshitake
dc.date.accessioned2025-07-21T05:57:52Z
dc.date.issued2017-02-27
dc.identifier.doi10.1166/jnn.2017.14104
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/6297
dc.subjectPhotodetection
dc.subject.classificationDiamond and Carbon-based Materials Research
dc.titlePhotodetection Characteristics of Heterojunctions Comprising <i>p</i>-Type Ultrananocrystalline Diamond Films and <i>n</i>-Type Si Substrates at Low Temperatures
dc.typeArticle

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