Characterization of Bi-doped FAPbI3 perovskite films investigated by X-ray absorption spectroscopy

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dc.contributor.authorTirapat Wechprasit
dc.contributor.authorAtipong Bootchanont
dc.contributor.authorYingyot Infahsaeng
dc.contributor.authorPoramed Wongjom
dc.contributor.authorSuttipong Wannapaiboon
dc.contributor.authorAnusit Kaewprajak
dc.contributor.authorPisist Kumnorkaew
dc.contributor.authorWutthigrai Sailuam
dc.contributor.authorWittawat Saenrang
dc.contributor.authorWisanu Pecharapa
dc.contributor.authorWasan Maiaugree
dc.date.accessioned2026-05-08T19:18:05Z
dc.date.issued2025-5-26
dc.description.abstract), suggesting a reduction in carrier recombination. These findings demonstrate the potential of Bi-doping to stabilize perovskite structures with improved optoelectronic properties.
dc.identifier.doi10.1038/s41598-025-02226-1
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/16341
dc.publisherScientific Reports
dc.subjectPerovskite Materials and Applications
dc.subjectChalcogenide Semiconductor Thin Films
dc.subjectOptical properties and cooling technologies in crystalline materials
dc.titleCharacterization of Bi-doped FAPbI3 perovskite films investigated by X-ray absorption spectroscopy
dc.typeArticle

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