Implantation-induced defects analysis base on activation energy diagnostics

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dc.contributor.authorPengchan, Weera
dc.contributor.authorPhetchakul, Toempong
dc.contributor.authorPoyai, Amporn
dc.date.accessioned2026-08-06T09:59:11Z
dc.date.available2026-08-06T09:59:11Z
dc.date.issued2009-12-01
dc.description.abstractLow power consumption device can be realized by low junction leakage current. This leakage current relates to the defects in the depletion region of p-n junction. Among variety process steps, implantation step may generate defects. Therefore, the implantation-induced defects have been studied from the activation energy which has been obtained from the leakage current of p-n junction. The different geometry p-n junctions have been fabricated by a standard CMOS technology. The current-voltage (I-V) and high frequency capacitance-voltage (C-V) characteristics of p-n junctions with temperature dependence have been measured. The electrically active defects from implantation process can be extracted from the junction generation current density versus temperature. Base on this analysis, it will be demonstrated that the implantation-induced defects have been found in p+-n-well more than in n+-psubstrate. Finally, the possible nature of the defect will be discussed.
dc.identifier.citationIsic 2009 12th International Symposium on Integrated Circuits Proceedings, 518-521, 2009
dc.identifier.other2-s2.0-77950410749
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/2744
dc.sourceIsic 2009 12th International Symposium on Integrated Circuits Proceedings
dc.subjectActivation energy
dc.subjectDefect
dc.subjectImplantation
dc.subjectp-n junction
dc.subjectSilicon
dc.titleImplantation-induced defects analysis base on activation energy diagnostics
dc.typeConference Paper

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