Improving forward current characteristics of diode by X-ray irradiation

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dc.contributor.authorNiemcharoen, Surasak
dc.contributor.authorSrithanachai, Itsara
dc.contributor.authorUeamanapong, Surada
dc.contributor.authorPoyai, Amporn
dc.date.accessioned2026-08-06T10:04:02Z
dc.date.available2026-08-06T10:04:02Z
dc.date.issued2012-01-25
dc.description.abstractThese papers investigates the effect of X-ray on forward current characteristics of diode. The forward current of diode after X-ray irradiation energy 40 keV at the exposure time ranging 5, 10 second was increased, while 15 and 20 second was decreased. X-ray causes changing of the electrical characteristics of diode. Series resistance is the main factor for analyze on forward current characteristics. From the results, X-ray can improve performance of diode at the exposure time for 5 and 10 second. © (2012) Trans Tech Publications, Switzerland.
dc.identifier.citationAdvanced Materials Research, 433-440, 6713-6716, 2012
dc.identifier.doi10.4028/www.scientific.net/AMR.433-440.6713
dc.identifier.issn10226680
dc.identifier.other2-s2.0-84856035041
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/4127
dc.sourceAdvanced Materials Research
dc.subjectForward current
dc.subjectSeries resistance
dc.subjectX-ray irradiation
dc.titleImproving forward current characteristics of diode by X-ray irradiation
dc.typeConference Paper

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