Production of p_Type Si/n_Type __FeSi<sub>2</sub> Heterojunctions Using Facing_Targets Direct_Current Sputtering and Evaluation of Their Resistance and Interface State Density

Simple item page
dc.contributor.authorRawiwan Chaleawpong
dc.contributor.authorNathaporn Promros
dc.contributor.authorPeerasil Charoenyuenyao
dc.contributor.authorAdison Nopparuchikun
dc.contributor.authorPhongsaphak Sittimart
dc.contributor.authorTomohiro Nogami
dc.contributor.authorTsuyoshi Yoshitake
dc.date.accessioned2025-07-21T06:00:33Z
dc.date.issued2018-10-01
dc.identifier.doi10.1002/pssa.201701022
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/7801
dc.subjectEquivalent series resistance
dc.subjectAtmospheric temperature range
dc.subject.classificationSemiconductor materials and interfaces
dc.titleProduction of p_Type Si/n_Type __FeSi<sub>2</sub> Heterojunctions Using Facing_Targets Direct_Current Sputtering and Evaluation of Their Resistance and Interface State Density
dc.typeArticle

Files

Collections

All