Ultra-low voltage tunable transconductor based on bulk-driven quasi-floating-gate technique

This paper presents ultra-low voltage transconductor using a new bulk-driven quasi-floating-gate technique (BD-QFG). This technique leads to significant increase in the transconductance and the bandwidth values of the MOS transistor (MOST) under ultra-low voltage condition. The proposed CMOS structure of the transconductor is capable to work with ultra-low supply voltage of ±300 mV and low power consumption of 18 μW. The transconductance value of the transconductor is tunable by external resistor with wide linear range. To prove the validation of the new described technique a second-order Gm-C multifunction filter is presented as one of the possible applications. The simulation results using 0.18 μm CMOS N-Well process from TSMC show the attractive features of the proposed circuit. © 2013 World Scientific Publishing Company.