Fabrication of mesa structural n_type nanocrystalline_FeSi <sub>2</sub> /p_type Si heterojunction photodiodes by liftoff technique combined with photolithography

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dc.contributor.authorSuguru Funasaki
dc.contributor.authorNathaporn Promros
dc.contributor.authorRyuhei Iwasaki
dc.contributor.authorMotoki Takahara
dc.contributor.authorMahmoud Shaban
dc.contributor.authorTsuyoshi Yoshitake
dc.date.accessioned2025-07-21T05:54:22Z
dc.date.issued2013-11-18
dc.identifier.doi10.1002/pssc.201300346
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/4284
dc.subjectPhotodiode
dc.subjectPhotodetection
dc.subjectNanocrystalline material
dc.subject.classificationSemiconductor materials and interfaces
dc.titleFabrication of mesa structural n_type nanocrystalline_FeSi <sub>2</sub> /p_type Si heterojunction photodiodes by liftoff technique combined with photolithography
dc.typeArticle

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