Low-voltage bulk-driven QFG-regulated self-cascode super MOS transistor

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dc.contributor.authorThongleam, Thawatchai
dc.contributor.authorSuadet, Apirak
dc.contributor.authorKasemsuwan, Varakorn
dc.date.accessioned2026-08-06T10:14:15Z
dc.date.available2026-08-06T10:14:15Z
dc.date.issued2016-09-06
dc.description.abstractA bulk-driven super MOS transistor (BD-SMT) for low voltage operation is presented. The proposed transistor achieves a high effective transconductance (G<inf>m(eff)</inf>), high effective drain impedance (R<inf>D(eff)</inf>) and low effective source impedance (R<inf>S(eff)</inf>). BD-SMT is designed based on regulated self-cascode and negative feedback techniques. The transistor been designed using a 0.18 μm CMOS technology and operated from a 0.4 V supply with a static power consumption of 12 μW. The simulation results showed higher G<inf>m(eff)</inf>, larger R<inf>D(eff)</inf> and smaller R<inf>S(eff)</inf> as compared to those of simple bulk-driven MOS transistor.
dc.identifier.citation2016 13th International Conference on Electrical Engineering Electronics Computer Telecommunications and Information Technology Ecti Con 2016, 2016
dc.identifier.doi10.1109/ECTICon.2016.7561359
dc.identifier.other2-s2.0-84988884584
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/6985
dc.source2016 13th International Conference on Electrical Engineering Electronics Computer Telecommunications and Information Technology Ecti Con 2016
dc.subjectbulk-driven
dc.subjectlow voltage
dc.subjectregulated self-cascode
dc.titleLow-voltage bulk-driven QFG-regulated self-cascode super MOS transistor
dc.typeConference Paper

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