Synthesis of p-type PbS quantum dot ink via inorganic ligand exchange in solution for high-efficiency and stable solar cells

dc.contributor.authorNapasuda Wichaiyo
dc.contributor.authorYuyao Wei
dc.contributor.authorChao Ding
dc.contributor.authorGuozheng Shi
dc.contributor.authorWitoon Yindeesuk
dc.contributor.authorLiang Wang
dc.contributor.authorHuān Bì
dc.contributor.authorJiaqi Liu
dc.contributor.authorShuzi Hayase
dc.contributor.authorYusheng Li
dc.contributor.authorYongge Yang
dc.contributor.authorQing Shen
dc.date.accessioned2026-05-08T19:17:03Z
dc.date.issued2025-4-1
dc.description.abstractAbstract Traditional p-type colloidal quantum dot (CQD) hole transport layers (HTLs) used in CQD solar cells (CQDSCs) are commonly based on organic ligands exchange and the layer-by-layer (LbL) technique. Nonetheless, the ligand detachment and complex fabrication process introduce surface defects, compromising device stability and efficiency. In this work, we propose a solution-phase ligand exchange (SPLE) method utilizing inorganic ligands to develop stable p-type lead sulfide (PbS) CQD inks for the first time. Various amounts of tin (II) iodide (SnI 2 ) were mixed with lead halide (PbX 2 ; X = I, Br) in the ligand solution. By precisely controlling the SnI₂ concentration, we regulate the transition of PbS QDs from n-type to p-type. PbS CQDSCs were fabricated using two different HTL approaches: one with 1,2-ethanedithiol (EDT)-passivated QDs via the LbL method (control) and another with inorganic ligand-passivated QD ink (target). The target devices achieved a higher power conversion efficiency (PCE) of 10.93%, compared to 9.83% for the control devices. This improvement is attributed to reduced interfacial defects and enhanced carrier mobility. The proposed technique offers an efficient pathway for producing stable p-type PbS CQD inks using inorganic ligands, paving the way for high-performance and flexible CQD-based optoelectronic devices.
dc.identifier.doi10.1088/1674-4926/25030003
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/15807
dc.publisherJournal of Semiconductors
dc.subjectQuantum Dots Synthesis And Properties
dc.subjectChalcogenide Semiconductor Thin Films
dc.subjectNanocluster Synthesis and Applications
dc.titleSynthesis of p-type PbS quantum dot ink via inorganic ligand exchange in solution for high-efficiency and stable solar cells
dc.typeArticle

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