Roentgen radiation response in P-N semiconductor device

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dc.contributor.authorTorasa, Chonmapat
dc.contributor.authorSrithanachai, Itsara
dc.date.accessioned2026-08-06T10:35:33Z
dc.date.available2026-08-06T10:35:33Z
dc.date.issued2022-01-01
dc.description.abstractRadiation is an important for investigate semiconductor device process improvement area. Currently, radiation use for many areas in semiconductor device and one of application use semiconductor device for detector. However, radiation is one of part of cure process in semiconductor area although radiation has high energy and may impact to semiconductor device performance. The experiment of radiation exposed on semiconductor device investigate radiation impact area on device by COMSOL simulation before fabricate semiconductor diode. COMSOL results show high temperature on active area of semiconductor device while exposed with SRFE process that may impact to device mechanism and electrical properties of device.
dc.identifier.citationMaterials Today Proceedings, 65, 2436-2438, 2022
dc.identifier.doi10.1016/j.matpr.2022.06.072
dc.identifier.issn22147853
dc.identifier.other2-s2.0-85132871296
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/12825
dc.sourceMaterials Today Proceedings
dc.subjectExposure
dc.subjectRoentgen radiation
dc.subjectSemiconductor device
dc.subjectSoft radiation flash exposure (SRFE)
dc.titleRoentgen radiation response in P-N semiconductor device
dc.typeConference Paper

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