Inductance Simulators and Their Application to the 4th Order Elliptic Lowpass Ladder Filter Using CMOS VD-DIBAs

Abstract

This paper presents inductance simulators using the voltage differencing differential input buffered amplifier (VD-DIBA) as an active building block. Three types of inductance simulators, including floating lossless inductance, series inductance-resistance, and parallel inductance-resistance simulators, are proposed, in addition to their application to the 4th order elliptic lowpass ladder filter. The simple design procedures of these inductance simulators using a circuit block diagram are also given. The proposed inductance simulators employ two VD-DIBAs and two passive elements. The complementary metal oxide semiconductor (CMOS) VD-DIBA used in this design utilizes the multiple-input metal oxide semiconductor (MOS) transistor technique in order to achieve a compact and simple structure with a minimum count of transistors. Thanks to this technique, the VD-DIBA offers high performances compared to the other CMOS structures presented in the literature. The CMOS VD-DIBAs and their applications are designed and simulated in the Cadence environment using a 0.18 µm CMOS process from Taiwan semiconductor manufacturing company (TSMC). Using a supply voltage of ±0.9 V, the linear operation of VD-DIBA is obtained over a differential input range of −0.5 V to 0.5 V. The lowpass (LP) ladder filter realized with the proposed inductance simulators shows a dynamic range (DR) of 80 dB for a total harmonic distortion (THD) of 2% at 1 kHz and a 1.8 V peak-to-peak output. In addition, the experimental results of the floating inductance simulators and their applications are obtained by using VD-DIBA constructed from the available commercial components LM13700 and AD830. The simulation results are in agreement with the experimental ones, confirming the advantages of the inductance simulators and their application.