Gamma-radiation Induced Degradation of the Electrical Characteristics of NMOSFETs

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dc.contributor.authorRuangphait, Anucha
dc.contributor.authorKerdpradist, Amonrat
dc.contributor.authorMuanghlua, Rangson
dc.contributor.authorWongprasert, Yothin
dc.date.accessioned2026-08-06T10:35:38Z
dc.date.available2026-08-06T10:35:38Z
dc.date.issued2022-01-01
dc.description.abstractIn this paper, we present the gamma-radiation induced degradation of the electrical characteristics of N-channel Metal Oxide Semiconductor Field Effect Transistors (NMOSFETs). The exposure was done with a<sup>60</sup>Co gamma-ray source over the total dose range of 1 kGy to 10 kGy, with a dose rate of 3.9 kGyhr. The effects of irradiation induced degradation on device parameters such as threshold voltage, low field mobility, device transconductance (G<inf>m</inf>), saturation drain current, off state leakage current and subthreshold swing were investigated. The threshold voltage was determined using the linear extrapolation method. The device dimensions with Wide/ Long channel that excluded the Narrow Channel Effect (NCE) and the Short Channel Effect (SCE) were measured. The results showed that the threshold voltage, device transconductance and low field mobility decreased but the saturation drain current, off state leakage current and subthreshold swing increased as the gamma irradiation increased. Finally, the macro parameter models were investigated and discussed.
dc.identifier.citationCurrent Applied Science and Technology, 22(3), 2022
dc.identifier.doi10.55003/cast.2022.03.22.004
dc.identifier.issn25869396
dc.identifier.other2-s2.0-85130460107
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/12851
dc.sourceCurrent Applied Science and Technology
dc.subjectdevice parameters
dc.subjectgamma radiation
dc.subjectNMOSFETs
dc.subjectthreshold voltage
dc.titleGamma-radiation Induced Degradation of the Electrical Characteristics of NMOSFETs
dc.typeArticle

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