Advances in flexible telluride thin-film thermoelectric generators: Deposition, performance, and module fabrication
| dc.contributor.author | Theekhasuk, Nattharika | |
| dc.contributor.author | Sakdanuphab, Rachsak | |
| dc.contributor.author | Kianwimol, Supasak | |
| dc.contributor.author | Khumtong, Thanakorn | |
| dc.contributor.author | Toan, Nguyen Van | |
| dc.contributor.author | Sakulkalavek, Aparporn | |
| dc.date.accessioned | 2026-08-06T10:55:10Z | |
| dc.date.available | 2026-08-06T10:55:10Z | |
| dc.date.issued | 2026-04-01 | |
| dc.description.abstract | Flexible thermoelectric generators (TEGs) are gaining increasing attention for wearable and skin-attachable electronics due to their ability to harvest low-grade heat from the human body. In this work, p-type Sb<inf>2</inf>Te<inf>3</inf> and n-type Bi<inf>2</inf>Te<inf>3</inf> thin films were deposited by direct current (DC) magnetron sputtering, and the effects of post-deposition annealing on their structural, electrical, and thermal transport properties were systematically evaluated. X-ray diffraction revealed that n-Bi<inf>2</inf>Te<inf>3</inf> exhibited higher crystallinity than p-Sb<inf>2</inf>Te<inf>3</inf>, attributed to its lower formation energy. Annealing at 250 °C markedly enhanced the electrical conductivity of both films, with p-Sb<inf>2</inf>Te<inf>3</inf> showing a larger improvement due to concurrent increases in carrier concentration and mobility driven by Te volatilization and the formation of acceptor-type vacancies and antisite defects. In contrast, n-Bi<inf>2</inf>Te<inf>3</inf> exhibited a slight reduction in carrier concentration as a result of compensating donor defects. Consequently, maximum ZT values of approximately 0.5 for p-Sb<inf>2</inf>Te<inf>3</inf> and 0.25 for n-Bi<inf>2</inf>Te<inf>3</inf> were achieved at 513 K. Notably, the compatibility factor (S) values of both films differed by less than a factor of two, indicating favorable thermodynamic pairing for p–n module assembly. A flexible TEG module with 12 thermocouples was subsequently fabricated and delivered an output power of 0.65 μW at ΔT < 25 K, demonstrating promising potential for scalable self-powered wearable electronics. | |
| dc.identifier.citation | Ceramics International, 52(9), 13035-13044, 2026 | |
| dc.identifier.doi | 10.1016/j.ceramint.2026.01.442 | |
| dc.identifier.issn | 02728842 | |
| dc.identifier.other | 2-s2.0-105034358060 | |
| dc.identifier.uri | https://dspace.kmitl.ac.th/handle/123456789/18003 | |
| dc.source | Ceramics International | |
| dc.subject | Annealing treatment | |
| dc.subject | Bi2Te3thin films | |
| dc.subject | DC magnetron sputtering | |
| dc.subject | Flexible thermoelectric generator | |
| dc.subject | Low-grade heat harvesting | |
| dc.subject | Sb2Te3 | |
| dc.title | Advances in flexible telluride thin-film thermoelectric generators: Deposition, performance, and module fabrication | |
| dc.type | Article |