Impact of annealing temperature and carbon doping on the wetting and surface morphology of semiconducting iron disilicide formed via radio frequency magnetron sputtering

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dc.contributor.authorPeerasil Charoenyuenyao
dc.contributor.authorNathaporn Promros
dc.contributor.authorRawiwan Chaleawpong
dc.contributor.authorNattakorn Borwornpornmetee
dc.contributor.authorPattarapol Sittisart
dc.contributor.authorY_ki Tanaka
dc.contributor.authorTsuyoshi Yoshitake
dc.date.accessioned2025-07-21T06:03:54Z
dc.date.issued2020-07-23
dc.identifier.doi10.1016/j.tsf.2020.138248
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/9610
dc.subjectCavity magnetron
dc.subject.classificationSemiconductor materials and interfaces
dc.titleImpact of annealing temperature and carbon doping on the wetting and surface morphology of semiconducting iron disilicide formed via radio frequency magnetron sputtering
dc.typeArticle

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