Electrical switching and conduction mechanisms of nonvolatile write-once-read-many-times memory devices with ZnO nanoparticles embedded in polyvinylpyrrolidone

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dc.contributor.authorK. Onlaor
dc.contributor.authorT. Thiwawong
dc.contributor.authorB. Tunhoo
dc.date.accessioned2025-07-21T05:54:49Z
dc.date.issued2014-04-01
dc.identifier.doi10.1016/j.orgel.2014.03.024
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/4518
dc.subjectBistability
dc.subjectNon-Volatile Memory
dc.subjectPolyvinylpyrrolidone
dc.subjectFlash Memory
dc.subjectIndium tin oxide
dc.subject.classificationAdvanced Memory and Neural Computing
dc.titleElectrical switching and conduction mechanisms of nonvolatile write-once-read-many-times memory devices with ZnO nanoparticles embedded in polyvinylpyrrolidone
dc.typeArticle

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