Subthreshold operation of MOIS devices: boundary of operation

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dc.contributor.authorNone Jirawath Parnklang
dc.contributor.authorNone Phumin Jindajitawat
dc.contributor.authorNone Wisut Titiroongruang
dc.date.accessioned2025-07-21T05:47:14Z
dc.date.issued2002-11-08
dc.identifier.doi10.1109/tencon.2000.892213
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/290
dc.subjectSubthreshold conduction
dc.subjectSubthreshold slope
dc.subject.classificationSilicon Nanostructures and Photoluminescence
dc.titleSubthreshold operation of MOIS devices: boundary of operation
dc.typeArticle

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