The Effect of Gamma Irradiation on Threshold Voltage and Channel Mobility Degradation of NMOS

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dc.contributor.authorKerdpradist, Amonrat
dc.contributor.authorRuangphanit, Anucha
dc.contributor.authorTitiroongruang, Wisut
dc.contributor.authorMuanghlua, Rangson
dc.date.accessioned2026-08-06T10:20:18Z
dc.date.available2026-08-06T10:20:18Z
dc.date.issued2018-07-02
dc.description.abstractThis paper presents the effect of Gamma Irradiated on threshold voltage, surface mobility and transconductance on N-channel MOSFET devices at a gate oxide thickness of 15 nanometers, which is fabricated at Thai Microelectronics Center by 0.8-micron CMOS technology. Then gamma irradiation (Co-60) at a total dose varied from 1 to 10 \mathbf{kGy}. By performing five rounds to observe changes in threshold voltage when the devices were exposed to gamma rays for measurement to extraction threshold Voltage (V<inf>TH</inf>) into the surface mobility (Uo) from I<inf>DS</inf>Vs V<inf>Gs</inf> curves in the saturation region. As a result, the threshold Voltage reduces at highest dose by approximately 38% compared with conventional N-channel MOSFET, for a parameter extraction in the level 3 model for MOSFET SPICE parameters is presented.
dc.identifier.citationIeecon 2018 6th International Electrical Engineering Congress, 2018
dc.identifier.doi10.1109/IEECON.2018.8712257
dc.identifier.other2-s2.0-85066630591
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/8682
dc.sourceIeecon 2018 6th International Electrical Engineering Congress
dc.subjectextraction Threshold Voltage
dc.subjectGamma Irradiated
dc.subjectN-channel
dc.subjectsurface mobility
dc.titleThe Effect of Gamma Irradiation on Threshold Voltage and Channel Mobility Degradation of NMOS
dc.typeConference Paper

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