The effects of gamma irradiation on threshold voltage and channel mobility models of PMOS
| dc.contributor.author | Kerdpradist, Amonrat | |
| dc.contributor.author | Titiroongruang, Wisut | |
| dc.contributor.author | Atiwongsangthong, Narin | |
| dc.contributor.author | Muanghlua, Rangson | |
| dc.contributor.author | Ruangphanit, Anucha | |
| dc.date.accessioned | 2026-08-06T10:20:38Z | |
| dc.date.available | 2026-08-06T10:20:38Z | |
| dc.date.issued | 2018-07-02 | |
| dc.description.abstract | This paper presents the effects of gamma irradiation on threshold voltage and mobility models of PMOS. The devices with a gate oxide thickness of 15 nm fabricated in an 0.8-micron CMOS technology were measured and tested. The electrical properties were collected pre-irradiation and after the exposure by a<sup>60</sup>Co gamma-ray source in the dose range of 1 to 10 kGy, transient dose = 290.68 Gy/hr. The results show that the threshold voltage of big MOS at zero substrate bias (VT0) increased approximately 28%, but the low field surface mobility (UO) and the maximum transconductance parameter (K0) decreased in the same value by 7.5% and the THETA (? ) parameter decreased by 28%. All parameters caused the saturation drain current of big MOS to decrease 16%. For short channel effects, the saturation drain current decreased more. Finally, the short channel model parameter should be investigated and discussed in future. | |
| dc.identifier.citation | Ecti Con 2018 15th International Conference on Electrical Engineering Electronics Computer Telecommunications and Information Technology, 170-173, 2018 | |
| dc.identifier.doi | 10.1109/ECTICon.2018.8619885 | |
| dc.identifier.other | 2-s2.0-85062220680 | |
| dc.identifier.uri | https://dspace.kmitl.ac.th/handle/123456789/8771 | |
| dc.source | Ecti Con 2018 15th International Conference on Electrical Engineering Electronics Computer Telecommunications and Information Technology | |
| dc.subject | Gamma Irradiated | |
| dc.subject | P-Channel MOSFET | |
| dc.subject | Surface Mobility | |
| dc.subject | Threshold Voltage | |
| dc.title | The effects of gamma irradiation on threshold voltage and channel mobility models of PMOS | |
| dc.type | Conference Paper |
