Investigation of Oxide and Interface Trapped Charge on Threshold Voltage Shift in Gamma Irradiated NMOSFET by Subthreshold Method

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dc.contributor.authorAnucha Ruangphanit
dc.contributor.authorRangson Muanghlua
dc.date.accessioned2025-07-21T06:05:02Z
dc.date.issued2021-04-01
dc.identifier.doi10.1109/iceast52143.2021.9426266
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/10236
dc.subjectCharge density
dc.subjectSubthreshold conduction
dc.subject.classificationSemiconductor materials and devices
dc.titleInvestigation of Oxide and Interface Trapped Charge on Threshold Voltage Shift in Gamma Irradiated NMOSFET by Subthreshold Method
dc.typeArticle

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