A High-Q Floating Active Inductor Based VCO for L-Band and Lower C-Band Applications in 180 nm CMOS Technology

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dc.contributor.authorAditya Kumar Hota
dc.contributor.authorKabiraj Sethi
dc.contributor.authorKriangkrai Sooksood
dc.contributor.authorSushanta Kumar Mohapatra
dc.date.accessioned2025-07-21T06:09:44Z
dc.date.issued2023-08-08
dc.identifier.doi10.1007/s40031-023-00910-2
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/12718
dc.subjectdBc
dc.subjectCascode
dc.subjectQ factor
dc.subjectOscillation (cell signaling)
dc.subject.classificationRadio Frequency Integrated Circuit Design
dc.titleA High-Q Floating Active Inductor Based VCO for L-Band and Lower C-Band Applications in 180 nm CMOS Technology
dc.typeArticle

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