Extraction of mobility degradation, effective channel length and total series resistance of NMOS at elevated temperature

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dc.contributor.authorKunagone Kiddee
dc.contributor.authorAnucha Ruangphanit
dc.contributor.authorSurasak Niemcharoen
dc.contributor.authorNarin Atiwongsangthong
dc.contributor.authorRangson Muanghlua
dc.date.accessioned2025-07-21T05:52:04Z
dc.date.issued2011-05-01
dc.identifier.doi10.1109/ecticon.2011.5947755
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/2974
dc.subjectTransconductance
dc.subjectEquivalent series resistance
dc.subjectDegradation
dc.subject.classificationAdvancements in Semiconductor Devices and Circuit Design
dc.titleExtraction of mobility degradation, effective channel length and total series resistance of NMOS at elevated temperature
dc.typeArticle

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