Characterization of junction parameters in n-type nanocrystalline iron disilicide/intrinsic ultrananocrystalline diamond/amorphous carbon composite/p-type silicon heterojunctions

Simple item page
dc.contributor.authorPhongsaphak Sittimart
dc.contributor.authorAdison Nopparuchikun
dc.contributor.authorPeeradon Onsee
dc.contributor.authorAsanlaya Duangrawa
dc.contributor.authorSakmongkon Teakchaicum
dc.contributor.authorNathaporn Promros
dc.date.accessioned2025-07-21T05:59:12Z
dc.date.issued2018-01-01
dc.identifier.doi10.1016/j.matpr.2018.01.011
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/7018
dc.subjectNanocrystalline material
dc.subject.classificationSemiconductor materials and interfaces
dc.titleCharacterization of junction parameters in n-type nanocrystalline iron disilicide/intrinsic ultrananocrystalline diamond/amorphous carbon composite/p-type silicon heterojunctions
dc.typeArticle

Files

Collections

All