High-dielectric constant AlON prepared by RF gas-timing sputtering for high capacitance density - A. Poyai; W. Bunjongpru; N. Klunngien; S. Porntheerapat; C. Hruanan; S. Sopitpan; J. Nukeaw (My University, 2008)
Keywords: Auger electron spectroscopy; High-_ dielectric; Semiconductor materials and devices