Temperature and devices dimension dependence on threshold voltage, the low field mobilty and the series parasitic resistance of PMOSFET - N. Sakuna; R. Muanghlua; S. Niemcharoen; A. Ruangphanit; A. Poyai (My University, 2013)
Keywords: Transconductance; Equivalent series resistance; Parasitic element; Negative-bias temperature instability; Channel length modulation; Advancements in Semiconductor Devices and Circuit Design