Pressure-dependent elastic constants and sound velocities of wurtzite SiC, GaN, InN, ZnO, and CdSe, and their relation to the high-pressure phase transition: A first-principles study - Kanoknan Sarasamak; Sukit Limpijumnong; Walter R. L. Lambrecht (My University, 2010)
Keywords: Wurtzite crystal structure; GaN-based semiconductor devices and materials