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    Light-response characteristics of platinum doped silicon photodetector
    (2013-11-04)
    Nararug, Budsara
    ;
    Ueamanapong, Surada
    ;
    Srithanachai, Itsara
    ;
    Janprapha, Supakorn
    ;
    Suwanchatree, Ai Lada
    The purposeof this research article is present electrical characteristic of Pt-doped silicon photodetector compare with undoped silicon photodetector. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of Pt-doped detector were investigated. In this experiment, the results of Pt-doped detector show that the dark currentisobviously decreased and the photocurrent is decreased about 9 to 10 orders. Furthermore, the capacitance characteristic isslightly increased about 0.15 pF. The effects platinum on silicon indicated the carrier in silicon have been changed. © (2013) Trans Tech Publications, Switzerland.
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    The effect of X-ray irradiation on the electrical properties of pt-doped P-N diode
    (2013-08-30)
    Janprapha, Supakorn
    ;
    Srithanachai, Itsara
    ;
    Ueamanapong, Surada
    ;
    Khunkhao, Sunya
    ;
    Thongnak, Thanawat
    This paper presents the effect of X-ray irradiation on the electrical properties of Pt-doped P-N diode with X-ray energy 70 keV for 205 seconds. The results show that the radiation affected both reverse and forward current characteristics of P-N diode. The forward current is increased about 3 orders after radiation, while the leakage current is increased slightly after irradiation. Moreover, build-in voltage value is also changed after irradiation. The cause of parameters changing can be analyzed from carrier lifetime and series resistance. It can be seen clearly that Xray irradiation technique are significant and can be used to improving electronic devices. © (2013) Trans Tech Publications Switzerland.
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    Carrier lifetime of platinum doped P-N diode after irradiation by soft X-ray
    (2013-08-30)
    Nararug, Budsara
    ;
    Srithanachai, Itsara
    ;
    Ueamanapong, Surada
    ;
    Khunkhao, Sanya
    ;
    Janprapha, Supakorn
    This paper analyzes the effect of X-ray irradiation on the electrical properties of Pt-doped p-n diode. X-ray energy irradiated on Pt-doped P-N diode with 70 keV with time 205 sec. After irradiations, the current-voltage (I-V) characteristics and capacitance-voltage (C-V) characteristics and carrier degeneration lifetime (τ<inf>g</inf>) were investigated. The results show that the leakage current is slightly increased after the diodes were exposed X-ray and affect higher degeneration carrier lifetime. The effects after X-ray irradiation indicated that the defects of the diode have been changed. © (2013) Trans Tech Publications Switzerland.