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Carrier lifetime of platinum doped P-N diode after irradiation by soft X-ray
Author(s)
Nararug, Budsara
Srithanachai, Itsara
Ueamanapong, Surada
Khunkhao, Sanya
Janprapha, Supakorn
Thongnak, Thanawat
Niemcharoen, Surasak
Date Issued
August 30, 2013
Type
Conference Paper
Abstract
This paper analyzes the effect of X-ray irradiation on the electrical properties of Pt-doped p-n diode. X-ray energy irradiated on Pt-doped P-N diode with 70 keV with time 205 sec. After irradiations, the current-voltage (I-V) characteristics and capacitance-voltage (C-V) characteristics and carrier degeneration lifetime (τg) were investigated. The results show that the leakage current is slightly increased after the diodes were exposed X-ray and affect higher degeneration carrier lifetime. The effects after X-ray irradiation indicated that the defects of the diode have been changed. © (2013) Trans Tech Publications Switzerland.
Citation
Advanced Materials Research, 717, 117-120, 2013