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Spectroscopic study on amorphous tantalum oxynitride thin films prepared by reactive gas-timing RF magnetron sputtering
(2019-10-30)
Lertvanithphol, T.
;
Rakreungdet, W.
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Chananonnawathorn, C.
;
Eiamchai, P.
;
Limwichean, S.
The amorphous tantalum oxynitride (TaO<inf>x</inf>N<inf>y</inf>) thin films were prepared on silicon (100) substrates by magnetron sputtering system with different techniques of conventional reactive sputtering and reactive gas-timing (RGT). The films were studied via spectroscopic ellipsometry (SE) measured in the range of 0.75–5.0 eV with 0.025 eV interval at 70° incident angle, and the optical model based on Tauc-Lorentz function was constructed to extract the properties of the films. The SE results indicated that all prepared films were grown homogeneously and show different optical properties upon their deposition conditions and techniques. The optical properties of film prepared by conventional reactive sputtering were close to the tantalum oxide film (TaO). The refractive index and optical band gap (E<inf>g</inf>) of RGT samples changed with the oxygen timing and correlated with the change of oxygen and nitrogen concentration of the films. In addition, the morphologies, crystallinities, atomic concentrations and distributions of nitrogen atoms in the films analyzed by field-emission scanning electron microscopy, glazing-incident X-ray diffraction, X-ray photoelectron spectroscopy and X-ray absorption spectroscopy are also discussed.
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Observations of the initial stages on reactive gas-timing sputtered TaO thin films by dynamic in situ spectroscopic ellipsometery
(2019-06-01)
Chittinan, D.
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Buranasiri, P.
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Lertvanithphol, T.
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Eiamchai, P.
;
Patthanasettakul, V.
Dynamic in-situ spectroscopic ellipsometry (iSE) was employed to investigate the growth mechanism of the tantalum oxide (TaO) film on silicon wafer substrate deposited by reactive gas-timing RF magnetron sputtering compared with conventional reactive sputtering. The effect of reactive gas timing parameter on physical structure and optical property were analyzed by both the continuous and island film growth model with Tauc-Lorentz optical model. The variation of refractive index, film thickness and void volume fraction were obtained from dynamic fits of iSE data indicated that the growth process of the amorphous TaO thin films was divided into two regimes: the nucleation stage and continuous-layer stage. These stages were observed during deposition although the initial film growth stage corresponds to the island film growth model. The study demonstrates that sputtered TaO by the RGT technique at the O<inf>2</inf> on-off gas timing has played a crucial factor in improving the formation of nucleation stage and that the deposited TaO thin films were high deposition rate with high refractive index. The complementary field emission scanning electron microscope (FE-SEM) and transmission electron microscope (TEM) showed a good agreement with the film thickness and morphology obtained from dynamic iSE measurement. The real-time monitoring of iSE offers important evidences to understand the growth mechanism of reactive gas-timing technique.
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Phase formation polycrystalline vanadium oxide via thermal annealing process under controlled nitrogen pressure
(2017-10-20)
Jessadaluk, S.
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Khemasiri, N.
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Rahong, S.
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Rangkasikorn, A.
;
Kayunkid, N.
This article provides an approach to improve and control crystal phases of the sputtering vanadium oxide (V<inf>x</inf>O<inf>y</inf>) thin films by post-thermal annealing process. Usually, as-deposited V<inf>x</inf>O<inf>y</inf> thin films at room temperature are amorphous phase: post-thermal annealing processes (400 °C, 2 hrs) under the various nitrogen (N<inf>2</inf>) pressures are applied to improve and control the crystal phase of V<inf>x</inf>O<inf>y</inf> thin films. The crystallinity of V<inf>x</inf>O<inf>y</inf> thin films changes from amorphous to α-V<inf>2</inf>O<inf>5</inf> phase or V<inf>9</inf>O<inf>17</inf> polycrystalline, which depend on the pressure of N<inf>2</inf> carrier during annealing process. Moreover, the electrical resistivity of the V<inf>x</inf>O<inf>y</inf> thin films decrease from 105 Ω cm (amorphous) to 6×10-1 Ω cm (V<inf>9</inf>O<inf>17</inf>). Base on the results, our study show a simply method to improve and control phase formation of V<inf>x</inf>O<inf>y</inf> thin films<inf>.</inf>
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Control the crystal growth of Al-doped ZnO thin film prepared by pulsed laser deposition and the influences on its optical and electrical properties
(2017-10-20)
Khemasiri, N.
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Jessadaluk, S.
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Kayunkid, N.
;
Rahong, S.
;
Rangkasikorn, A.
In this work, highly transparent and highly conductive thin films of Al-doped ZnO (AZO) are achieved by pulsed laser deposition (PLD). By changing substrate temperature in the range of room temperature to 500°C during the deposition process, the preferential growth direction of AZO crystal is controlled and, therefore, the surface morphology, optical and electrical properties of AZO thin films are able to be manipulated. X-ray diffractograms as a function of the substrate temperature clearly illustrate the ability to control the preferential growth direction of AZO. At the low substrate temperature, the growth along [002] direction corresponding to c-axis of hexagonal ZnO is only observed. By elevating the substrate temperature, not only crystallinity of AZO thin film is further improved but also the competition of crystal growth along the [002], [001] and [101] directions are occurred due to the increase of total energy and surface mobility of cluster/atom. The AZO films obtained by all preparation conditions exhibit an n-type semiconducting characteristics, furthermore, the carrier concentration and the carrier mobility of AZO thin films can be optimized to reach 4.10×1020 cm-3 and 7.53 cm2/Vs, respectively. The excellences in both carrier concentration and mobility of AZO thin film lead to very low resistivity of 2.08×10-3 cm. In addition, the wide optical band gap of ∼3.50 eV together with the high transparency over 90% in visible region is obtained from the AZO thin films. The exceptional optical and electrical properties of AZO thin film demonstrate that such material has enough potential to become a promising candidate using in optoelectronic applications.
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Improved Efficiency of Polymer Solar Cells by means of Coating Hole Transporting Layer as Double Layer Deposition
(2017-10-20)
Chonsut, T.
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Kayunkid, N.
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Rahong, S.
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Rangkasikorn, A.
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Wirunchit, S.
Polymer solar cells is one of the promising technologies that gain tremendous attentions in the field of renewable energy. Optimization of thickness for each layer is an important factor determining the efficiency of the solar cells. In this work, the optimum thickness of Poly(3,4-ethylenedioxythione): poly(styrenesulfonate) (PEDOT:PSS), a famous polymer widely used as hole transporting layer in polymer solar cells, is determined through the analyzing of device's photovoltaic parameters, e.g. short circuit current density (J<inf>sc</inf>), open circuit voltage (V<inf>oc</inf>), fill factor (FF) as well as power conversion efficiency (PCE). The solar cells were prepared with multilayer of ITO/PEDOT:PSS/PCDTBT:PC<inf>70</inf>BM/TiO<inf>x</inf>/Al by rapid convective deposition. In such preparation technique, the thickness of the thin film is controlled by the deposition speed. The faster deposition speed is used, the thicker film is obtained. Furthermore, double layer deposition of PEDOT:PSS was introduced as an approach to improve solar cell efficiency. The results obviously reveal that, with the increase of PEDOT:PSS thickness, the increments of J<inf>sc</inf> and FF play the important role to improve PCE from 3.21% to 4.03%. Interestingly, using double layer deposition of PEDOT:PSS shows the ability to enhance the performance of the solar cells to 6.12% under simulated AM 1.5G illumination of 100 mW/cm2.
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Rapid convective deposition; An alternative method to prepare organic thin film in scale of nanometer
(2017-01-01)
Chonsut, T.
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Rangkasikorn, A.
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Wirunchit, S.
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Kaewprajak, A.
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Kumnorkaew, P.
The aim of this research is to introduce the alternative process named "Rapid Convective Deposition" to obtain organic thin film in nanometer scale. There are several advantages of this method, including simply control film thickness via solution concentration and translational speed as well as significantly reduce required material leading to lower manufacturing cost. The specific properties of thin film were characterized by the combinations of microscopic and spectroscopic techniques. To confirm that the convective deposition has a potential to become a candidate method using to prepare thin film, the films prepared by conventional spin coating and alternative convective deposition were compared in term of processing e.g. required solution as well as processing time and film's properties e.g. thickness, morphology and uniformity of the film. The results indicate that the rapid convective deposition is able to provide similar film's quality as obtain from spin coating but requires less processing time and required solution to prepare the nanoscale organic thin film.
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Non-enzymatic urea sensor using molecularly imprinted polymers surface modified based-on ion-sensitive field effect transistor (ISFET)
(2016-11-25)
Rayanasukha, Y.
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Pratontep, S.
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Porntheeraphat, S.
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Bunjongpru, W.
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Nukeaw, J.
A novel molecularly imprinted electrochemical sensor based on ISFET device has been developed for urea detection sensor. The molecularly imprinted polymers (MIPs) were prepared by photopolymerization on the surface of ISFET device using PMMA and urea as the functional polymer and molecular template, respectively. The fabricated sensors were characterized by potentiometry and UV-Vis spectroscopy. The preparation conditions were optimized for performance of the sensors, i.e. drop-cast volume and incubation time. The MIP modified ISFET sensors has linear range response from 1.0 × 10− 4 to 1.0 × 10− 1 M with the limit of detection of 1.0 × 10− 4 M (S/N = 3). The MIP modified ISFET sensors also exhibit excellent reproducibility, repeatability and stability, as well as high selectivity to urea.
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Optical band engineering of metal-oxynitride based on tantalum oxide thin film fabricated via reactive gas-timing RF magnetron sputtering
(2016-11-25)
Khemasiri, N.
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Jessadaluk, S.
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Chananonnawathorn, C.
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Vuttivong, S.
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Lertvanithphol, T.
In this paper, we demonstrate a novel technique, as called reactive gas-timing (RGT) RF magnetron sputtering, to control and design an optical band engineering of TaON thin films without an external heating substrate temperature and post annealing treatment process. The influence of the oxygen intervals ranged from 5 to 60 s on deposition rate, chemical composition and optical properties of TaON thin films were investigated. The chemical composition was characterized by auger electron spectroscopy (AES). The optical properties were determined by UV–Vis spectrophotometer and spectroscopic ellipsometry. The nitrogen atomic concentration of the TaON thin films deposited by RGT decreased when the oxygen gas-timing intervals increased. In addition, the RGT sputtered TaON films could be demonstrated band gaps engineering from 1.90 to 2.15 eV.
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Durable nitrate sensor by surface modification
(2016-11-25)
Chaisriratanakul, W.
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Bunjongpru, W.
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Jeamsaksiri, W.
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Srisuwan, A.
;
Porntheeraphat, S.
This work presents the development of nitrate sensor based on Ion Sensitive Field Effect Transistor (ISFET) technology to achieve longer device's lifetime. This lifetime depended on the adhesion of PVC ion-selective membrane on the Si<inf>3</inf>N<inf>4</inf> sensing membrane of ISFET. The adhesion level directly affected the leaching of plasticizer. Such improvement utilized surface modification techniques by immersing the sensing membrane in the solution of 5% 3-mercaptopropyl-trimethoxysilane (MPTMS)/methanol. The modified surface was detected through the change of hydrophobicity and thickness of MPTMS using the contact angle measurement and ellipsometry techniques. The appropriate time for immersion was 18 h. The modified surface achieved the optimal hydrophobicity with contact angle of 100.32°. The presence of MPTMS film was confirmed by detecting the thiol-group using Fourier Transform Infrared (FTIR) spectrophotometry and Auger Electron Spectroscopy (AES). The PVC ion-selective membrane was then immobilized on the surface to create nitrate sensors with the following characteristics. The Nitrate-Nitrogen detection limit = 2.44 ppm with linear range from 5 to 60 ppm at sensitivity of 56 mV/dec. (R2 = 1). The response time was 90 s. Finally, this nitrate sensor could extend the total utilization lifetime from 8 to 17 weeks.
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Silicon nitride thin films deposited by reactive gas-timing magnetron sputtering for protective coating applications
(2015-01-01)
Khemasiri, N.
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Paleeya, N.
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Sae-tang Phromyothin, D.
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Horprathum, M.
;
Porntheeraphat, S.
Silicon nitride is a promising alternative to carbon based materials for protective coatings, owing to its compatibility with existing silicon-based microfabrication. The complexity of the fabrication processes and contaminations hamper fine-tuning to obtain desirable coating properties. We have explored the reactive gas-timing rf plasma sputtering technique for silicon nitride thin film deposition as an alternative method to fine-tune the film properties. The gas-timing technique controls the on-off sequence of the sputtering gas (Ar) and the reactive gas (N<inf>2</inf>) during deposition. We focus this investigation to the effect of the Ar:N<inf>2</inf> gas timing ratio (10:0, 10:1, 10:3, 10:5, 10:7 and 10:10) on the composition, the morphology, the corrosion resistance, and the hardness properties of the films, in comparison to the films deposited by conventional reactive sputtering with Ar-N<inf>2</inf> gas mixture. These deposited silicon nitride films were characterized by Auger electron spectroscopy, Raman spectroscopy, and atomic force microscopy. The chemical resistance was measured by the electrochemical corrosion test in sulfuric acid, while the hardness properties were obtained by nanoindentation. The results reveal that although the nitrogen content in the films increases only slightly when the N<inf>2</inf> timing is prolonged, the corrosive current of the films decreases abruptly. A thin passivating oxidized layer is found to play a major role in the corrosion resistance. In contrast, the hardness properties exhibit a uniform variation with the N<inf>2</inf> timing. The gas-timing sequence may induce morphological changes the underlying silicon nitride films. The highest hardness obtained by the gas-timing technique almost doubles that produced by the conventional mixed gas sputtering. Thus the reactive gas-timing technique suggests a new route to selectively control the properties of silicon nitride films with minor modification to existing microfabrication processes.

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