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Ultraviolet response of ZnO nanorod/Sb-doped ZnO thin film homojunction structure prepared by all-chemically wet process
(2025-02-01)
Boonyarattanakalin, Kanokthip
;
Sinornate, Wuttichai
;
Mimura, Hidenori
;
Mekprasart, Wanichaya
;
Pecharapa, Wisanu
In this work, ZnO nanorod/Sb-doped ZnO thin film structure was fabricated and its relevant properties were investigated. The device was prepared by Sb-doped ZnO sol-gel spin coating technique onto ITO substrate annealed in nitrogen atmosphere followed by the hydrothermal process to obtain ZnO nanorod. The crystal structure demonstrates (002) plane dominant hexagonal wurtzite ZnO without phase impurity. The deterioration in the crystal structure of Sb-doped ZnO due to the Sb is incorporated in the ZnO lattice. The element component in each layer is confirmed by depth profile measurement. The low transmittance in the visible region is due to high reflection at the surface of the ZnO nanorod. The electrical measurement confirms that ZnO nanorod/Sb-doped ZnO thin film has p-n homojunction properties under dark conditions and 18 times higher photovoltage than the Sb-doped/undoped ZnO double layer device under UV LED irradiation due to enhanced photon harvesting of ZnO nanorod structure.
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Structural, optical and electrical properties of Sb-doped ZnO/ZnO homojunction thin film structures prepared by sol-gel based coating process under nitrogen annealing atmosphere
(2022-09-01)
Sinornate, Wuttichai
;
Mimura, Hidenori
;
Pecharapa, Wisanu
This investigation focuses on structural, optical and electrical properties of Sb-doped/undoped ZnO double layer structure annealed in nitrogen atmosphere. The double layer film was prepared by sol-gel spin coating technique onto ITO substrate then annealed in nitrogen atmosphere. The crystal structure demonstrates hexagonal ZnO without phase impurity. The deterioration in the crystal structure due to Sb is incorporated in ZnO lattice and nitrogen annealing atmosphere and the decrease in diffraction intensity due to the different thickness of the ZnO film. The existence of Sb atom in the doped ZnO film is confirmed by depth profile measurement. The transmittance spectra exhibit high transparency with interference fringe and the photoluminescence spectrum shows the near-band-edge emission of ZnO without any emission in the visible region. The electrical properties demonstrate diode characteristics and photocurrent under dark and UV irradiation, respectively.
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MORPHOLOGICAL and PHYSICAL PROPERTIES of ZnO NANOSTRUCTURES GROWN on Sb-DOPED ZnO SEEDING FILMS ANNEALED under DIFFERENT ATMOSPHERES
(2021-12-01)
Sinornate, Wuttichai
;
Mimura, Hidenori
;
Pecharapa, Wisanu
In this work, morphological and physical properties of pyramid-like ZnO nanostructures fabricated on Sb-doped ZnO seeding films annealed under different atmospheres are extensively studied. The Sb-doped ZnO seeding films were first prepared by sol-gel spin coating technique onto glass substrate then annealed in nitrogen, air and argon followed by low-temperature hydrothermal process for ZnO nanostructures fabrication. The morphological results exhibit the growth of pyramid-like ZnO nanostructure with increasing density of the ZnO nanostructures. The crystal structure shows pyramid-like ZnO wurtzite hexagonal growth along the c-axis without any impurity phase. The growth of pyramid-like ZnO nanostructures is due to the high growth rate of (002) plane. Photoluminescence spectra exhibit the near-band-edge of all samples while the red emission appears in ZnO nanostructures after the hydrothermal process due to the imperfection in the crystal. The reflectance of ZnO nanostructures covers the visible region with the absorption edge of 375nm. The calculation shows the relevant energy band gaps in the range of 3.26-3.28eV. The difference in hydrothermally grown ZnO nanostructures is significantly affected by different annealing atmospheres.
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Structural, Morphological, Optical, and Electrical Properties of Sol–Gel Derived Sb-Doped ZnO Thin Films Annealed Under Different Atmospheres
(2021-01-01)
Sinornate, Wuttichai
;
Mimura, Hidenori
;
Pecharapa, Wisanu
Herein, undoped and antimony (Sb)-doped zinc oxide (ZnO) thin films are prepared by a sol–gel spin-coating method. The influence of different annealing atmospheres including nitrogen and argon on pertinent properties of the prepared films is scrutinized. Structural, optical, morphological, and electrical properties of all annealed films are investigated by X-ray diffraction (XRD), field emission scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), photoluminescence spectroscopy (PL), ultraviolet–visible spectroscopy, and current–voltage measurement. The XRD results exhibit that the films possess ZnO hexagonal wurtzite without impurity. The deterioration in the crystallinity of the film is highly influenced by Sb dopant and annealing atmosphere exhibiting the decrease in nanoparticle size after annealing in nitrogen, argon atmosphere, and upon doping. XPS results confirm that Sb3+ is well incorporated in ZnO lattice and the shift of XPS spectra in the films annealed in nitrogen atmosphere indicates nitrogen bonding with zinc. The PL spectra exhibit blueshift of near band edge emission due to the Sb dopant substituting in Zn site in ZnO lattice and red-infrared emission induced by Sb dopant. The decrease in electrical resistance of ZnO film can be obtained by Sb doping and annealing in nitrogen atmosphere.
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Role of Sb-dopant on physical and optical properties of ZnO thin film deposited by sol-gel-based coating method
(2019-01-01)
Sinornate, Wuttichai
;
Mimura, Hidenori
;
Pecharapa, Wisanu
Sb-doped ZnO films were prepared by sol-gel spin coating technique on glass substrate. The sol-gel was prepared from zinc acetate dihydrate as zinc precursor and diethanolamine as sol stabilizer. Antimony (III) acetate was selected as the precursor of Sb. The doping concentration was varied from 0 to 10 mol%. The films were prepared by spin coating technique following by annealing at 500°C for 2 h in ambient air. The XRD exhibits ZnO hexagonal wurtzite without impurity phase. Their XRD peaks show deterioration in crystallinity that is in accordance with FESEM and TEM images showing decreasing in particle size with increasing doping content. The XPS confirm the existence of Sb3+ that could substitute Zn2+ on the zinc site or zinc vacancy. The photoluminescence results exhibit blue-shift with increasing Sb doping concentration. The transmittance spectra show high transmittance above 90% in visible region.
1
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Effect of F incorporation on physical and optical properties of hydrothermally grown ZnO nanorods
(2018-01-01)
Sinornate, Wuttichai
;
Chongsri, Krisana
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Boonyarattanakalin, Kanokthip
;
Pecharapa, Wisanu
F-doped ZnO nanorods were synthesized via hydrothermal process with variation of Fluorine doping contents (0-10%) starting from zinc oxide thin film as a seeding layer for nanorod growth. The zinc oxide seeding thin film was prepared by sol-gel spin coating at 2000 rpm on glass substrate using zinc acetate precursor with annealing at 500°C in air for 2 h. Ammonium fluoride (NH<inf>4</inf>F) was used as F doping precursor. The properties of F-doped ZnO nanorods were characterized by field emission electron microscope (FESEM), X-ray diffraction (XRD), energy-dispersive X-ray spectroscopy (EDX) and UV-Visible spectrophotometer. Corresponding results indicated that growth of ZnO:F nanorods with good crystallinity and grown in (002) plane in undoped ZnO and F-doped ZnO 5%. The average size diameter of undoped and F-doped ZnO nanorods at 3%, 5% and 10% are 56, 96, 70 and 103 nm, respectively. From cross section images the average length of undoped and F-doped ZnO nanorods at 3%, 5% and 10% are 400, 375, 199 and 478 nm, respectively. The transmittance spectra shows moderate transparency (<80%) of the ZnO nanorod film in visible region with corresponding band gap range of 3.25-3.28 eV.
2
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Growth and characterization of Ga/F co-doped ZnO nanorods/nanodisks via hydrothermal process
(2016-12-01)
Chongsri, Krisana
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Sinornate, Wuttichai
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Boonyarattanakalin, Kanokthip
;
Pecharapa, Wisanu
Ga/F co-doped ZnO nanorods/nanodisks (GFZO) were synthesized using a hydrothermal process by varying the Ga doping levels (1-5 wt.%) and F doping levels (1-5 wt.%). Zinc nitrate, gallium nitrate hydrate and ammonium fluoride were chosen as starting precursors for Zn, Ga and F sources, respectively. The nanorod growth was initiated by zinc oxide seeding film fabricated by spin coating on glass substrate using zinc acetate precursor and annealed at 500°C for 2 h. Effect of different dopant concentrations on morphologies, structural, and optical properties of the samples were investigated by X-ray diffraction (XRD), scanning electron microscope (SEM) and photoluminescence spectroscopy (PL), respectively. The results of Ga/F codoped ZnO (GFZO) were compared to the single doped specimens including Ga:ZnO (GZO) and F:ZnO (FZO) samples, and bare ZnO sample. The results suggest that content of either Ga or F dopant has high influence on relevant properties of as-synthesized nanorods/nanodisks.
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Hydrothermal synthesis and characterization of ZnO:F nanorod structure
(2016-01-01)
Sinornate, Wuttichai
;
Chongsri, Krisana
;
Pecharapa, Wisanu
F-doped ZnO nanorod structures were synthesized via hydrothermal process with variation of doping content starting from zinc nitrate solution and zinc oxide thin film used as seeding layer. The zinc oxide seeding film was fabricated by spin coating on glass substrate using zinc acetate precursor and annealed at 500 °C for 2 h. Relevant properties of ZnO:F nanorod structures were characterized by scanning electron microscope (SEM), X-ray diffraction (XRD), energy-dispersive X-ray spectroscopy (EDX) and UV-VIS spectrophotometer. Corresponding results indicated that ZnO:F nanorod array, grown in (002) plane, has the characteristics of good crystallinity. In addition, this study showed that ZnO:F nanorod with exceptional structure can be obtained by hydrothermal process, operated at proper treatment time, temperature and F-doping content.
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