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Author: search.filters.author.Charoenyuenyao, PeerasilSubject: search.filters.subject.FTDCS

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    Item type:Publication,
    Production of p-Type Si/n-Type β-FeSi2 Heterojunctions Using Facing-Targets Direct-Current Sputtering and Evaluation of Their Resistance and Interface State Density
    (2018-10-24)
    Chaleawpong, Rawiwan
    ;
    Promros, Nathaporn
    ;
    Charoenyuenyao, Peerasil
    ;
    Nopparuchikun, Adison
    ;
    Sittimart, Phongsaphak
    Without a post-annealing procedure, the β-FeSi<inf>2</inf> thin films are epitaxially grown on Si(111) wafer substrates via facing-targets direct-current sputtering. During epitaxial growth, the temperature for heating of substrates is maintained at 600 °C. The resultant p-type Si/n-type β-FeSi<inf>2</inf> heterojunctions are produced. At room temperature, a large leakage current under an applied reverse bias voltage together with a small photo-detective performance is observed from the measured dark and irradiated current density–voltage curves of the created heterojunctions. Both of the conductance–voltage (G/ω–V) and capacitance–voltage (C–V) measurements at different frequencies (f) in the range of 5 kHz–1 MHz are performed in the dark at room temperature. The interface state density (N<inf>ss</inf>) and series resistance (R<inf>s</inf>) in the created p-type Si/n-type β-FeSi<inf>2</inf> heterojunctions are computed and analyzed from the measured C–V–f and G/ω–V–f curves. N<inf>ss</inf> is found to be 3.48 × 10<sup>12</sup> eV<sup>−1</sup> cm<sup>−2</sup> at 5 kHz and decreased to 4.68 × 10<sup>11</sup> eV<sup>−1</sup> cm<sup>−2</sup> at 1 MHz. Moreover, the values of R<inf>s</inf> at zero bias are 2.21 kΩ at 5 kHz and 13.66 Ω at 1 MHz. These results review the presence of N<inf>ss</inf> and R<inf>s</inf> in the created heterojunctions, and they can be the cause to degrade the heterojunction performance.