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Author: search.filters.author.Chemthung, YothinSubject: search.filters.subject.Hall Effect

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    Effect of aspect ratio on horizontal field magnetoresistance
    (2019-01-01)
    Phetchakul, Toempong
    ;
    Chemthung, Yothin
    ;
    Poyai, Amporn
    This paper studies the aspect ratio (W/L), width (W) per length (L) of semiconductor resistor based on Hall effect current mode for horizontal magnetic field. At low concentration, 10<sup>14</sup> cm<sup>-3</sup>, W/L < 1, the length has direct effect to magnetoresistance. The W/L = 1, the large resistor provides magnetioresistance better than small device. The W/L ˃ 1, the width has inversely proportional to magnetoresistance. The %MR(B) is around 1 % at 0.5 T, 1 mA. The long resistor (W/L < 1) can create ΔR in the order of several kilo ohms and several hundred ohms for short resistor (W/L > 1). The contribution factors ρ(L/W) for high ΔR are low concentration and aspect ratio (W/L < 1). The high %MR(B) is contributed by high current density of short structure (W/L > 1). At high concentration 10<sup>17</sup> cm<sup>-3</sup>, aspect ratio and magnetoresistance are not sensitive to magnetic field because the Hall effect hardly occurs in high concentration material.
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    Effect of horizontal magnetic field on magnetoresistance
    (2018-07-02)
    Chemthung, Yothin
    ;
    Phetchakul, Toempong
    ;
    Poyai, Amporn
    The effect of horizontal magnetic field on magnetoresistance was studied by TCAD simulation. At low concentration 10<sup>14</sup> and 10<sup>15</sup> cm<sup>-3</sup>, the magnetoresistance linearly depends on magnetic field density and direction. The percent of magnetoresistance (%MR) of this study is less than 1 % at biased current 1 mA, 0.5 T. The unbalance between Lorentz's force FL and Hall electrical force FH causes this effect. The positive and negative % MR of magnetic field in -y and y direction are caused by FL > FH. At the high concentration 10<sup>16</sup> - 10<sup>19</sup> cm<sup>-3</sup>, the Lorentz's force and Hall electrical force are nearly equal. The magnetoresistance is a little bit positive both in -y and y magnetic field direction which are caused by FL > FH and FH > FL, respsctively.