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Item type:Publication, EFFECT of SEEDING FILM TYPE ON MORPHOLOGY and ELECTRICAL PROPERTIES of Ga-DOPED ZnO NANOSTRUCTURES GROWN by HYDROTHERMAL PROCESS(2018-12-01) ;Chongsri, Krisana; In the present work, we are interested in modifying the structures and electrical properties of Ga-doped ZnO (GZO) nanostructures by incorporation of Ga and F elements into ZnO seeding films. The ZnO, Ga-doped ZnO and F-doped ZnO thin film layers were grown by sol-gel dip coating onto glass substrates. The GZO nanostructures were grown by hydrothermal method starting from zinc nitrate and gallium (III) nitrate hydrate with a crystal growth assistance using the different types of seeding film layers. The X-ray diffractometer (XRD) and field emission scanning electron microscope (FE-SEM) are observe for the crystal structures and surface morphologies of GZO nanostructures. The changes in electrical resistance of the GZO nanostructures due to the different seeding layers were analyzed by the four-point probe technique. It is shown that the structural and electrical properties are found to be affected by the types of seeding layers. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Effects of seeding layer thickness on physical and morphological structure of Ga/F co-doped ZnO nanostructures(2017-01-01) ;Chongsri, Krisana; The effects of seed layer thickness on structural properties and morphology of Ga/F co-doped ZnO nanostructures were investigated in this work. The seed layers with various thicknesses were deposited on glass substrates by dip-coating. It is hypothesized that a certain range of seed layer thickness can significantly alter the outcomes of the morphological structure, density, and shape of the as-synthesized nanostructure products. The Ga/F co-doped ZnO nanostructures were grown on these seed layers by a hydrothermal process using Zn(NO<inf>3</inf>)<inf>2</inf>, NH<inf>4</inf>F, GaN<inf>3</inf>O<inf>9</inf> and hexamethyltetramine. The effects of seeding layer thickness on morphologies and structural properties were investigated by X-ray diffraction (XRD), scanning electron microscope (SEM), and UV-Vis spectroscopy. More detailed studies to clarify the seed layer effect on the growth of Ga/F co-doped ZnO nanostructures are further discussed.1
