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Author: search.filters.author.Gong, Y.Subject: search.filters.subject.electrical hysteresis

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    Thermally Assisted Nonvolatile Memory in Monolayer MoS2 Transistors
    (2016-10-12)
    He, G.
    ;
    Ramamoorthy, H.
    ;
    Kwan, C. P.
    ;
    Lee, Y. H.
    ;
    Nathawat, J.
    We demonstrate a novel form of thermally-assisted hysteresis in the transfer curves of monolayer MoS<inf>2</inf> FETs, characterized by the appearance of a large gate-voltage window and distinct current levels that differ by a factor of ∼10<sup>2</sup>. The hysteresis emerges for temperatures in excess of 400 K and, from studies in which the gate-voltage sweep parameters are varied, appears to be related to charge injection into the SiO<inf>2</inf> gate dielectric. The thermally-assisted memory is strongly suppressed in equivalent measurements performed on bilayer transistors, suggesting that weak screening in the monolayer system plays a vital role in generating its strongly sensitive response to the charge-injection process. By exploiting the full features of the hysteretic transfer curves, programmable memory operation is demonstrated. The essential principles demonstrated here point the way to a new class of thermally assisted memories based on atomically thin two-dimensional semiconductors.