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Author: search.filters.author.Hruanun, C.Subject: search.filters.subject.ISFET

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    Application of double gate ion sensitive field effect transistor for detection of fluid flow rate in micro-channel
    (2010-02-05)
    Jiemsakul, T.
    ;
    Trithaveesak, O.
    ;
    Bunjongpru, W.
    ;
    Hruanun, C.
    ;
    Poyai, A.
    In this work a micro flow sensor, using a double gate Ion Sensitive Field Effect Transistor (ISFET) and two metal electrodes, for fluid flow rate measurement in micro-channels were fabricated and demonstrated. By the channel fabrication the molds were patterned reversely on a silicon wafer using Deep Reactive Ion Etcher (DRIE). The double gate ISFET and two metal electrodes were placed on the mold in the distance 15 millimeters. The channels were formed using polydimethylsiloxane (PDMS) from the mold with the width 1000 and 2000 micrometer and the depth of 250 micrometer. After removing PDMS from the mold the channel was bonded with glass substrate by RF plasma technique. By the verification of flow sensors working range water and one mole of sodium nitrate solution were alternated in flow channel. The fluid flow rate were compared with the flow rate from weighing. It found from the comparison that the high deviation was found at low flow rate. Furthermore, the deviation depends also on the dimension of the flow channel. © (2010) Trans Tech Publications.
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    The effect of ion implantation on ISFET-sensing membrane
    (2010-02-05)
    Piyananjaratsri, R.
    ;
    Bunjongpru, W.
    ;
    Chaowicharat, E.
    ;
    Trithaveesak, O.
    ;
    Saeteaw, K.
    This research studied the effect of ion implantation on electrical properties of ISFETs. In the experiments the sensing membrane area were implanted with 3 types of ions (Boron(B), Phosphorus(P), and Arsenic(As)). After the implantation without annealing, the IV-characteristics of Source/Drain (P-N junction) of ISFET were performed and compared with the behaviour before implantation. In addition, the response to acid-alkaline (sensitivity) of ISFET were also studied. From the results the leakage current of source-drain, P-N junction like, decreases significantly after the implantation. However, this process damaged the devices so that the response to acid-alkaline are lost. © (2010) Trans Tech Publications.