KMITL

Permanent URI for this communityhttps://dspace.kmitl.ac.th/handle/123456789/1

Browse

Settings

Author: search.filters.author.Khomdet, P.Subject: search.filters.subject.Indium oxynitride

Search Results

Now showing 1 - 1 of 1
  • Loading...
    Thumbnail Image
    Some of the metrics are blocked by your 
    consent settings
    Item type:Publication,
    Chemical characterization and electrical properties of indium oxynitride grown by reactive gas-timing RF magnetron sputtering
    (2010-02-05)
    Sungthong, A.
    ;
    Khomdet, P.
    ;
    Porntheeraphat, S.
    ;
    Hruanun, C.
    ;
    Poyai, A.
    This work investigates changes in the chemical composition of InON thin films, grown by reactive gas-timing rf magnetron sputtering with different O<inf>2</inf>:N<inf>2</inf> timing ratio characterized by Auger Electron Microscope (AES), Raman Spectroscopy which are well correlated with the electrical properties of films. The existence of nitrogen and oxygen in the deposited InON thin films was revealed by AES. Two Raman active optical phonons have been clearly observed and assigned to InN E<inf>1</inf>(TO) at ∼470 cm<sup>-1</sup> and E<inf>1</inf>(LO) at ∼570 cm<sup>-1</sup> and also shifted with different O<inf>2</inf>:N<inf>2</inf> timing ratio. The carrier mobility of InON thin films was decreased when the ratio of O<inf>2</inf>:N <inf>2</inf> timing is increased. © (2010) Trans Tech Publications.