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Chemical characterization and electrical properties of indium oxynitride grown by reactive gas-timing RF magnetron sputtering
Author(s)
Date Issued
February 5, 2010
Type
Conference Paper
Abstract
This work investigates changes in the chemical composition of InON thin films, grown by reactive gas-timing rf magnetron sputtering with different O2:N2 timing ratio characterized by Auger Electron Microscope (AES), Raman Spectroscopy which are well correlated with the electrical properties of films. The existence of nitrogen and oxygen in the deposited InON thin films was revealed by AES. Two Raman active optical phonons have been clearly observed and assigned to InN E1(TO) at ∼470 cm-1 and E1(LO) at ∼570 cm-1 and also shifted with different O2:N2 timing ratio. The carrier mobility of InON thin films was decreased when the ratio of O2:N 2 timing is increased. © (2010) Trans Tech Publications.
Citation
Advanced Materials Research, 93-94, 443-446, 2010